Advanced transistors (FinFET and GAA)

Which correctly describes the SOI (silicon on insulator) structure?

  1. AA transistor structure with no gate insulator
  2. BA structure in which transistors are built in a thin silicon layer on a buried oxide
  3. CA structure with two chips stacked
Show answer and explanation

Answer: B. A structure in which transistors are built in a thin silicon layer on a buried oxide

In SOI, transistors are built in a thin silicon layer on top of an oxide buried in the silicon substrate (the BOX layer). Because devices are insulated from the substrate, parasitic capacitance and leakage are small and latch-up does not occur. Fully depleted SOI (FD-SOI), with an extremely thin silicon layer, is used in low-power applications.

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More Advanced transistors (FinFET and GAA) questions

  1. Which correctly describes DIBL (drain-induced barrier lowering)?
  2. How is the effective channel width of a FinFET adjusted?
  3. Which correctly describes the CFET (complementary FET), researched as the structure to follow GAA?
  4. In high-k/metal gate transistors, which is one of the main ways to adjust the threshold voltage?
  5. Which correctly describes the gate-last (replacement metal gate) process?