What is Random dopant fluctuation (RDF)?
Threshold-voltage variation in small transistors caused by statistical variation in the number and position of dopant atoms in the channel. FinFETs and FD-SOI, which allow lightly doped channels, reduce it.
Random dopant fluctuation (RDF) in the explanations
But heavy doping lowers mobility and increases variability from random dopant fluctuation, so FinFETs and GAA devices use nearly undoped channels and set Vth with the gate work function.
How does the threshold voltage change when the impurity con…With scaling, variation from effects such as random dopant fluctuation grows relative to device size, making it hard to keep read and write margins even for the worst of hundreds of millions of cells.
In recent advanced processes, what is the most appropriate …
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Related terms
Threshold voltage Acceptor Mobility GAA (gate-all-around) Work function CFET (complementary FET) DTCO (design-technology co-optimization) EOT (equivalent oxide thickness) FD-SOI (fully depleted SOI) FinFET