What is MOCVD (metal-organic chemical vapor deposition)?
A method that grows crystals using metal-organic compounds and source gases such as ammonia. It is widely used to grow compound semiconductors such as GaN and GaAs.
Field: Epitaxial growth
MOCVD (metal-organic chemical vapor deposition) in the explanations
Hydrogen from MOCVD precursors such as ammonia bonds with Mg to form Mg-H complexes that keep it from acting as an acceptor.
Why does Mg-doped GaN grown by MOCVD remain highly resistiv…MOCVD reacts metal-organic precursors such as trimethylgallium with hydride gases such as ammonia on a heated substrate to grow compound-semiconductor crystals.
What is MOCVD (metal-organic chemical vapor deposition) mai…Growing only about 1 µm per hour, it is less productive than MOCVD but serves R&D, high-performance HEMTs and quantum devices.
Which is a characteristic of MBE (molecular beam epitaxy)?
Questions that mention MOCVD (metal-organic chemical vapor deposition) (7)
- Why does Mg-doped GaN grown by MOCVD remain highly resistive rather than p-type right after growth, and what is the countermeasure?
- What is MOCVD (metal-organic chemical vapor deposition) mainly used for?
- In MOCVD growth of GaN, what does the controlled condition "V/III ratio" mean?
- What must be watched for when handling metal-organic compounds such as trimethylgallium (TMGa), used as MOCVD sources?
- Which is a characteristic of MBE (molecular beam epitaxy)?
- Which method grows crystal on a substrate by precipitating it from a solution such as a molten metal?
- Which method is used to grow thick GaN layers quickly to make free-standing GaN substrates?
Related terms
GaN (gallium nitride) MBE (molecular beam epitaxy) Acceptor Annealing GaAs (gallium arsenide) HVPE (hydride vapor phase epitaxy) 4H-SiC Autodoping Critical thickness Epitaxial growth