Vapor-phase growth using gallium chloride, formed by reacting HCl with gallium, together with ammonia. Its very high growth rate is used to grow thick GaN crystals for free-standing substrates.
Field: Epitaxial growth
HVPE passes HCl over hot gallium to form gallium chloride (GaCl), which reacts with ammonia to grow GaN at tens to hundreds of µm per hour—tens of times faster than MOCVD.
Which method is used to grow thick GaN layers quickly to ma…GaN (gallium nitride) MOCVD (metal-organic chemical vapor deposition) 4H-SiC Autodoping Critical thickness Epitaxial growth Epitaxial lateral overgrowth (ELO) Heteroepitaxy Lattice mismatch MBE (molecular beam epitaxy)