What is 4H-SiC?
The SiC polytype mainly used for power devices. It has a wide band gap of about 3.3 eV and relatively high electron mobility.
Field: Epitaxial growth
4H-SiC in the explanations
Substrates cut about 4° off-axis present many atomic steps; adatoms incorporate at the steps and growth proceeds laterally (step-flow growth), so the crystal inherits the substrate's 4H-SiC stacking sequence.
In SiC epitaxial growth, what is the main reason for using …SiC has over 200 polytypes, but power devices mainly use 4H-SiC because of its wide bandgap (about 3.26 eV), high electron mobility (about 1000 cm²/V·s) and small anisotropy.
Which polytype is mainly used for SiC power devices?
Questions that mention 4H-SiC (2)
Related terms
SiC (silicon carbide) Epitaxial growth Step-flow growth Mobility Autodoping Critical thickness Epitaxial lateral overgrowth (ELO) Heteroepitaxy HVPE (hydride vapor phase epitaxy) Lattice mismatch