Epitaxial growth

Which method grows crystal on a substrate by precipitating it from a solution such as a molten metal?

  1. ALiquid phase epitaxy (LPE)
  2. BMolecular beam epitaxy (MBE)
  3. CMetal-organic chemical vapor deposition (MOCVD)
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Answer: A. Liquid phase epitaxy (LPE)

In liquid phase epitaxy, a solution containing the material to be grown is brought into contact with the substrate and the temperature is lowered to precipitate crystal. The equipment is simple and crystal quality is good, and it was once widely used to make compound semiconductor LEDs. Vapor-phase growth is better at precise thickness control.

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More Epitaxial growth questions

  1. Which is closest to the typical growth temperature for silicon epitaxy using trichlorosilane?
  2. When a thin silicon layer is grown epitaxially on a relaxed SiGe layer with a larger lattice constant, what strain develops in the silicon?
  3. Which are the main quality items controlled for epitaxial wafers?
  4. In SiC epitaxial growth, what is the main reason for using substrates tilted a few degrees from the crystal axis (with an off-angle)?
  5. Which is an advantage of performing silicon epitaxial growth at reduced pressure?