What is Autodoping?
Unintended incorporation into a growing epitaxial layer of dopant from the substrate or elsewhere via the gas phase. It is a problem when growing lightly doped layers on heavily doped substrates.
Field: Epitaxial growth
Autodoping in the explanations
Arsenic, antimony and phosphorus are chosen based on segregation and evaporation behavior, and suppressing out-diffusion into the epi layer (autodoping) is a challenge.
What is the main use of low-resistivity n⁺ silicon wafers h…Autodoping occurs when dopant evaporates from a heavily doped substrate—its back side or edges included—and is reincorporated through the gas phase into the growing layer.
What is the phenomenon called in which impurities from the …Growing at reduced pressure (several to tens of kPa) speeds gas diffusion, so dopant evaporated from the substrate does not linger in the boundary layer near the growth surface, suppressing autodoping.
Which is an advantage of performing silicon epitaxial growt…
Questions that mention Autodoping (4)
- What is the main use of low-resistivity n⁺ silicon wafers heavily doped with arsenic or antimony?
- What is the phenomenon called in which impurities from the substrate or elsewhere are incorporated into the growing layer through the gas phase during epitaxial growth?
- Which is an advantage of performing silicon epitaxial growth at reduced pressure?
- When a lightly doped epi layer is grown at high temperature on a heavily doped substrate, what is the phenomenon called in which substrate dopants seep into the epi layer by solid-state diffusion, smoothing the concentration change at the interface?
Related terms
Epitaxial growth On-resistance 4H-SiC Critical thickness Epitaxial lateral overgrowth (ELO) Heteroepitaxy HVPE (hydride vapor phase epitaxy) Lattice mismatch MBE (molecular beam epitaxy) Misfit dislocation