What is Lattice mismatch?
A difference in the atomic spacing (lattice constant) between a grown film and its substrate. A large mismatch causes strain and defects such as dislocations.
Field: Epitaxial growth
Lattice mismatch in the explanations
SiC conducts heat at about 400 W/(m·K), far better than silicon (about 150) or sapphire (about 35), and its lattice mismatch with GaN is a relatively small 3.5%, so it serves as the substrate for RF and high-power GaN HEMTs in base stations and radar (GaN-on-SiC).
What is one main reason SiC is used as the substrate for Ga…pMOS uses Ge-rich SiGe and nMOS uses heavily phosphorus-doped SiP; their lattice mismatch also strains the channel to boost mobility.
What is the main purpose of growing raised crystal on the f…
Questions that mention Lattice mismatch (3)
- What problem tends to occur when there is a large difference in lattice constant (lattice mismatch) between the substrate and the grown film?
- What is one main reason SiC is used as the substrate for GaN HEMTs?
- What is the main purpose of growing raised crystal on the fins in the source and drain of a FinFET by epitaxial growth?
Related terms
Critical thickness SiC (silicon carbide) GaN (gallium nitride) FinFET Epitaxial growth SiGe (silicon-germanium) Mobility 4H-SiC Autodoping Epitaxial lateral overgrowth (ELO)