Growing crystal from mask openings and letting it spread sideways over the mask. Dislocations from below do not propagate into the overgrown regions, reducing dislocations in materials such as GaN.
Field: Epitaxial growth
In ELO, crystals grow up through stripe openings in a mask such as SiO2 and then spread laterally over the mask until they coalesce.
In GaN and similar materials, what is the technique called …GaN (gallium nitride) 4H-SiC Autodoping Critical thickness Epitaxial growth Heteroepitaxy HVPE (hydride vapor phase epitaxy) Lattice mismatch MBE (molecular beam epitaxy) Misfit dislocation