Epitaxial growth

What is the phenomenon called in which impurities from the substrate or elsewhere are incorporated into the growing layer through the gas phase during epitaxial growth?

  1. AAutodoping
  2. BGettering
  3. CElectromigration
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Answer: A. Autodoping

Autodoping occurs when impurities evaporate from a heavily doped substrate or its back side and are incorporated through the gas into the growing layer. Because it causes the epitaxial layer's doping to deviate from the design, countermeasures such as covering the back of the substrate with oxide are used.

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More Epitaxial growth questions

  1. What is an advantage of a wafer with a lightly doped p-type epitaxial layer grown on a p+ substrate (p/p+ epitaxial wafer)?
  2. Which correctly describes the critical thickness in heteroepitaxial growth?
  3. What is the main purpose of heating the wafer in high-temperature hydrogen just before silicon epitaxial growth?
  4. Why are epitaxial layers important in the fabrication of SiC power devices?
  5. In epitaxial growth by CVD, the growth rate depends strongly on temperature in the relatively low-temperature regime. Why?