What is On-resistance?
The resistance of the current path when a power device is on. The smaller it is, the lower the conduction loss.
Field: Power semiconductors
On-resistance in the explanations
On-resistance RDS(on) is the drain-source resistance when the MOSFET conducts, and conduction loss is I²R—10 A through 10 mΩ dissipates 1 W.
When a MOSFET is used as a switch, which statement correctl…A MOSFET's on-resistance increases with temperature because mobility drops (a positive temperature coefficient).
Power MOSFETs are easy to use in parallel. Which statement …Theoretically, the on-resistance of silicon unipolar devices scales with about the 2.5th power of the voltage rating, so doubling the rating multiplies on-resistance by about 5.7 (the silicon limit).
Which correctly describes the relationship between breakdow…
Questions that mention On-resistance (16)
- When a MOSFET is used as a switch, which statement correctly describes its on-resistance?
- Power MOSFETs are easy to use in parallel. Which statement about the temperature dependence of on-resistance explains why?
- Which correctly describes the relationship between breakdown voltage and on-resistance in silicon power MOSFETs?
- What is the conduction loss of a power MOSFET with an on-resistance of 10 mΩ carrying 10 A?
- How does the breakdown voltage of a PN junction generally change when the impurity concentration on one side is lowered?
- What is the typical collector-emitter voltage of a silicon bipolar transistor in the saturation region?
- How does a MOSFET behave in the linear region, where the drain-source voltage VDS is sufficiently small?
- Which is the channel through which current flows in a GaN HEMT?
- Which is a characteristic of a superjunction (SJ) MOSFET?
- What is the main advantage of using SiC power devices in electric vehicle inverters?
- What is the main advantage of the trench gate structure in power MOSFETs, in which the gate is buried in a groove etched into the silicon?
- Which correctly describes the typical division of use between silicon MOSFETs and IGBTs?
- In highly scaled transistors, which factors are becoming increasingly important limits on performance?
- What is an advantage of RF MEMS switches, which switch RF signals by mechanically opening and closing contacts?
- What is the main use of low-resistivity n⁺ silicon wafers heavily doped with arsenic or antimony?
Related terms
SiC (silicon carbide) Mobility GaN (gallium nitride) Power MOSFET Saturation region HEMT (high-electron-mobility transistor) 2DEG (two-dimensional electron gas) Conductivity modulation Tail current Backside power delivery