Epitaxial growth

Which is an advantage of performing silicon epitaxial growth at reduced pressure?

  1. AAutodoping is easier to suppress
  2. BThe growth rate always increases
  3. CThe growth temperature can exceed 2000 °C
Show answer and explanation

Answer: A. Autodoping is easier to suppress

At reduced pressure, gas diffusion is faster, so impurities evaporated from the substrate are less likely to linger near the growth surface, suppressing autodoping. Thickness uniformity also tends to improve.

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More Epitaxial growth questions

  1. Which method measures the thickness of a lightly doped epitaxial layer on a heavily doped substrate using infrared interference?
  2. What is the main challenge in growing GaN on Si substrates?
  3. What is it called when doping gas is flowed during epitaxial growth to add dopants at the same time as growth?
  4. What is the periodic structure called in which layers of different materials, each only a few nm thick, are stacked alternately?
  5. Which technology is used to form the base layer of a SiGe HBT?