Advanced transistors (FinFET and GAA)

In highly scaled transistors, which factors are becoming increasingly important limits on performance?

  1. AParasitic resistance of source, drain and contacts, and parasitic capacitance around the gate
  2. BWafer diameter
  3. CPackage color
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Answer: A. Parasitic resistance of source, drain and contacts, and parasitic capacitance around the gate

As transistors shrink, the resistance of the source, drain and contacts grows as a share compared with the channel resistance itself. Narrower spacing between gate and contacts also increases parasitic capacitance. Because these limit performance, materials and structures continue to be improved.

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More Advanced transistors (FinFET and GAA) questions

  1. Which correctly describes materials such as molybdenum disulfide (MoS2), researched as channel materials for future ultra-small transistors?
  2. What is the main purpose of growing raised crystal on the fins in the source and drain of a FinFET by epitaxial growth?
  3. What is the basic way to reduce metal-semiconductor contact resistance?
  4. Which is considered to show the real degree of logic scaling better than the process generation (node) name?
  5. Which devices are being researched with the aim of breaking the 60 mV/dec subthreshold swing barrier?