Advanced transistors (FinFET and GAA)

Which devices are being researched with the aim of breaking the 60 mV/dec subthreshold swing barrier?

  1. ADiodes
  2. BThyristors
  3. CTunnel FETs and negative-capacitance FETs
Show answer and explanation

Answer: C. Tunnel FETs and negative-capacitance FETs

Conventional MOSFETs operate by carriers thermally surmounting a barrier, so at room temperature they cannot switch more steeply than 60 mV/dec. Tunnel FETs use band-to-band tunneling, and negative-capacitance FETs use voltage amplification by a ferroelectric, aiming to beat this limit and operate at low voltages.

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More Advanced transistors (FinFET and GAA) questions

  1. In nanosheet GAA, what is the main role of the insulator (inner spacer) placed between the gate and the source/drain between the sheets?
  2. When standard cell height is expressed in the number of routing tracks, what is the effect of reducing the number of tracks?
  3. What is the purpose of using several types of transistors with different threshold voltages on the same chip?
  4. Which technique covers the gate with insulator so that a slightly misaligned contact does not short to the gate?
  5. Why are SiGe and germanium considered or adopted instead of silicon as pMOS channel materials?