Advanced transistors (FinFET and GAA)

What is the main purpose of growing raised crystal on the fins in the source and drain of a FinFET by epitaxial growth?

  1. ATo make the transistor emit light
  2. BTo lengthen the gate
  3. CTo reduce parasitic resistance and apply strain to the channel
Show answer and explanation

Answer: C. To reduce parasitic resistance and apply strain to the channel

Fins are thin, so source/drain resistance and contact area become problems as they are. Raising the crystal by epitaxial growth lowers resistance and makes contacts easier to form. SiGe is used for pMOS and SiP for nMOS, which also apply strain to the channel.

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More Advanced transistors (FinFET and GAA) questions

  1. What is the basic way to reduce metal-semiconductor contact resistance?
  2. Which is considered to show the real degree of logic scaling better than the process generation (node) name?
  3. Which devices are being researched with the aim of breaking the 60 mV/dec subthreshold swing barrier?
  4. In nanosheet GAA, what is the main role of the insulator (inner spacer) placed between the gate and the source/drain between the sheets?
  5. When standard cell height is expressed in the number of routing tracks, what is the effect of reducing the number of tracks?