SEM vs TEM: Electron Microscopes in Semiconductor Analysis
Both microscopes use a beam of electrons instead of light, but they look at samples in different ways. A scanning electron microscope (SEM) scans a focused beam over the surface and builds an image from the electrons that come back, so it shows the shape of the surface. A transmission electron microscope (TEM) sends electrons through an extremely thin slice, so it can show the inside of the structure down to individual atoms. SEM is fast and easy; TEM is far more powerful but slow and demanding.
| Aspect | SEM | TEM |
|---|---|---|
| Principle | A focused beam scans the surface; secondary or backscattered electrons form the image | Electrons pass through a very thin sample; transmitted and diffracted electrons form the image |
| What it shows | Surface shape and composition contrast | Internal structure, crystal lattice and atomic-scale interfaces |
| Resolution | About 1 nm at best; typically a few nanometers or more | Below 0.1 nm: individual atoms can be seen |
| Sample preparation | Little: bulk samples can be used (insulators need a conductive coating) | Very demanding: the sample must be thinner than about 100 nm, often cut by focused ion beam (FIB) |
| Beam energy | About 0.5 to 30 kV | About 80 to 300 kV |
| Speed | Fast: minutes per sample | Slow: hours, including sample preparation |
| Cost | Lower | Higher |
| Typical uses | Line-width measurement (CD-SEM), defect review, cross-section views of devices | Gate-oxide thickness, thin-film stacks, crystal defects and interface structure |
Figures are typical orders of magnitude and vary by process generation and product.