Ball vs Wedge Bonding: Key Differences Explained

Both are wire bonding methods that connect the electrode pads of a chip to a lead frame or substrate with a thin metal wire. Ball bonding melts the tip of the wire with an electrical discharge to form a ball, then bonds it with heat, force and ultrasound. The ball has no direction, so the wire can be led out in any direction and bonding is fast, which makes it the most widely used method for IC packages. Wedge bonding presses the wire flat from the side and bonds it mainly with ultrasound. It can use aluminum wire and ribbon directly, so it is common in power semiconductors that carry large currents.

AspectBall bondingWedge bonding
Bond shapeThe first bond is a ball; the second bond is a stitch where the wire is pressed flatBoth the first and second bonds are wedge-shaped, with the wire pressed flat
ToolCapillary (a thin ceramic tube with a hole in the center)Wedge tool (feeds the wire at an angle from behind and presses it with the tip)
Bonding energyThermosonic, combining heat, force and ultrasound. The substrate is heated to about 150 to 200 °CMainly ultrasound and force. Aluminum wire can be bonded at room temperature
Wire materialGold, copper (including palladium-coated copper)Aluminum (thin and thick wire), aluminum ribbon, gold. Thick copper wire is also used for power
Wire diameterAbout 15 to 50 µmTens of µm for thin wire, about 100 to 500 µm for thick power wire. Flat ribbon is also used
DirectionalityThe ball has no direction, so the wire can be led out in any directionBonds are made along the wire feed direction, so the direction is fixed. The head or workpiece is rotated for each bond to align the direction
SpeedFast. Bonds can be made continuously without regard to directionSlower. Requires motion to align the direction
Bond size and pitchThe ball is about twice the wire diameter. Supports narrow pad pitches of a few tens of µmThe bond is narrower than a ball, so thin wire also suits narrow pitches
Loop shapeThe wire rises from the ball, so some height is needed. There are techniques to lower itLow loops are easy to make
Reliability concernsWith gold wire on aluminum pads, growth of intermetallic compounds and voids. With copper wire, cracking under the pad (cratering)With thick aluminum wire, bond lift-off and heel cracks caused by repeated temperature cycling
Typical usesIC packages in general, such as QFP, BGA and stacked memory chipsPower semiconductors and power modules, automotive electronics, RF and optical devices, connections with aluminum wire

Figures are typical orders of magnitude and vary by process generation and product.

When to use which

Ball bonding
When you want to connect an IC with many pads quickly using thin gold or copper wire. It is the standard method for IC packages.
Wedge bonding
When you want to use thick aluminum wire or ribbon to carry large currents, when you want to avoid heating, or when you need low loops.
Telling them apart
If the first bond has a round ball, it is ball bonding; if both ends are pressed flat, it is wedge bonding.

FAQ

What is the main difference between ball bonding and wedge bonding?

The shape of the wire bond. Ball bonding forms a ball on the wire tip with an electrical discharge and bonds it, so it has no direction and the wire can be led out in any direction. Wedge bonding presses the wire flat from the side, so the direction is fixed.

Why is aluminum wedge bonding common in power semiconductors?

Carrying large currents requires thick wire or ribbon about 100 to 500 µm in diameter. Thick aluminum wire can be bonded ultrasonically at room temperature without forming a ball, and the material is cheap, so it is widely used in power modules.

Why is aluminum wire not used for ball bonding?

Aluminum readily forms a tough oxide film on its surface, which makes it hard to form a stable round ball with an electrical discharge. So aluminum wire is mainly bonded by wedge bonding, and ball bonding uses gold or copper wire.

Check your understanding

Which wire bonding method melts the tip of a gold wire with an electrical discharge to form a ball, then bonds it to the electrode with heat and ultrasonic energy?

  1. ABall bonding (thermosonic bonding)
  2. BWedge bonding
  3. CReflow soldering
Show answer and explanation

Answer: A. Ball bonding (thermosonic bonding)

In ball bonding, the wire tip protruding from a fine tube called a capillary is melted by an electric spark into a ball about twice the wire diameter, which is bonded to the chip pad with heat, pressure and ultrasound. Since a ball has no orientation, the wire can be routed in any direction. Wedge bonding presses the wire flat from the side and is common with aluminum wire. Reflow uses no wire.

In wire bonding that forms a ball, where is the first bond (ball bond) generally made?

  1. AOn the surface of the molding compound
  2. BOn the chip's bond pad
  3. COn the leadframe or package substrate
Show answer and explanation

Answer: B. On the chip's bond pad

In ball bonding, the ball formed at the wire tip is first bonded to the chip pad (first bond), then the wire is looped to the lead or substrate pad and pressed flat there (second bond). The ball bond is small and suits narrow chip pads. When low wire loops are needed, as in stacked dies, the order is sometimes reversed.

What is the typical diameter of wires used in wire bonding?

  1. AAbout 1 to 2 mm
  2. BAbout 1 nm
  3. CAbout 15 to 50 µm
Show answer and explanation

Answer: C. About 15 to 50 µm

Bonding wires are very fine metal wires about 15–50 µm in diameter, mostly thinner than a human hair (about 70 µm). Chip pads are only tens of micrometers across, so the wire must be correspondingly fine. Power devices carrying large currents, on the other hand, use thick aluminum wires about 100–500 µm in diameter, flat ribbons or copper clips.

  1. In wire bonding, what is the main reason gold (Au) wire has been increasingly replaced by copper (Cu) wire?
  2. Which metal has been used in many ICs for the top-level bond pads where wire bonding is done?
  3. What is a typical failure seen in power cycling tests, which repeatedly heat and cool power modules?

Practice Packaging and assembly questions

Key terms explained

Wire bonding
A method of connecting the chip's bond pads to a lead frame or substrate with thin wires of gold, copper or similar metals.
Lead frame
A thin metal sheet combining the pad that holds the chip with the external terminals (leads). It is used in packages such as QFP.
IGBT
Insulated-gate bipolar transistor. Driven by a MOS gate, it achieves a low on-state voltage even at high voltage ratings through conductivity modulation.

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