What is Plasma doping?

Implanting low-energy ions by exposing the wafer directly to a plasma containing the dopant. It delivers high doses quickly and dopes 3D structures such as fins fairly uniformly.

Field: Ion implantation

Plasma doping in the explanations

Plasma doping exposes the whole wafer at once rather than scanning a beam, delivering high doses of 10¹⁵–10¹⁶ cm⁻² quickly even at energies below 1 keV.
What is an advantage of plasma doping, in which the wafer i…

Questions that mention Plasma doping (1)

What is an advantage of plasma doping, in which the wafer is exposed directly to a dopant-containing plasma and implanted with low-energy ions?

Related terms

Plasma FinFET Annealing Channeling Faraday cup Halo implant (pocket implant) Implant dose Ion implantation Laser anneal Pre-amorphization implant (PAI)

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