What is Step-flow growth?

A growth mode in which the crystal extends sideways from atomic steps on a slightly off-axis substrate. In SiC it is used so the layer inherits the substrate's polytype.

Field: Epitaxial growth

Step-flow growth in the explanations

Substrates cut about 4° off-axis present many atomic steps; adatoms incorporate at the steps and growth proceeds laterally (step-flow growth), so the crystal inherits the substrate's 4H-SiC stacking sequence.
In SiC epitaxial growth, what is the main reason for using …

Questions that mention Step-flow growth (1)

In SiC epitaxial growth, what is the main reason for using substrates tilted a few degrees from the crystal axis (with an off-angle)?

Related terms

SiC (silicon carbide) Epitaxial growth 4H-SiC Autodoping Critical thickness Epitaxial lateral overgrowth (ELO) Heteroepitaxy HVPE (hydride vapor phase epitaxy) Lattice mismatch MBE (molecular beam epitaxy)

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