Epitaxial growth

Which polytype is mainly used for SiC power devices?

  1. A4H-SiC
  2. B3C-SiC
  3. C15R-SiC
Show answer and explanation

Answer: A. 4H-SiC

SiC has more than 200 polytypes, but power devices mainly use 4H-SiC, which has a large band gap of about 3.3 eV and little anisotropy in electron mobility. The established technology for high-quality substrates and epitaxial growth is another reason.

Practice this topic Back to topic

More Epitaxial growth questions

  1. In MBE, which technique observes growth in situ by directing an electron beam at the surface at a grazing angle and examining the diffraction pattern?
  2. What is the origin of the word "epitaxy"?
  3. What is the typical thickness range of the epitaxial layer on silicon epi wafers for LSIs and power devices?
  4. In silicon epitaxial growth, what is the main role of the large flow of hydrogen (H2) supplied along with the source gas?
  5. Which method is used to grow thick GaN layers quickly to make free-standing GaN substrates?