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Which correctly describes the difference between 3D DRAM and HBM?

  1. A3D DRAM stacks the memory cells themselves vertically within one chip, while HBM stacks finished DRAM chips with TSVs
  2. B3D DRAM and HBM are two names for the same technology
  3. CHBM stacks memory cells vertically within one chip, while 3D DRAM places DRAM chips side by side
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Answer: A. 3D DRAM stacks the memory cells themselves vertically within one chip, while HBM stacks finished DRAM chips with TSVs

HBM stacks several finished DRAM chips connected by TSVs and places them near the processor for high bandwidth; it is chip stacking. 3D DRAM, like 3D NAND, stacks layers of memory cells vertically within a single chip to raise capacity without relying only on planar shrinking. As of the mid-2020s, 3D DRAM is in research and development.

  • A. Correct. The difference is whether cells or chips are stacked.
  • B. They are different technologies that stack different things.
  • C. This is reversed; HBM is chip stacking.
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More DRAM questions

  1. What is the main reason 3D DRAM is hard to achieve simply by stacking many layers as in 3D NAND?
  2. Which correctly describes the structure of a typical 1-bit DRAM memory cell?
  3. Why does DRAM need periodic refresh operations?
  4. Which correctly describes the read operation of DRAM?
  5. Which pair of three-dimensional structures has been used in DRAM cells to secure capacitor capacitance?

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