DRAM

Which correctly describes the read operation of DRAM?

  1. AReading does not change the cell's charge at all
  2. BReading changes the cell's charge, so the data is amplified by a sense amplifier and written back to the cell
  3. CReading uses tunneling current at high voltage
Show answer and explanation

Answer: B. Reading changes the cell's charge, so the data is amplified by a sense amplifier and written back to the cell

In DRAM, connecting the cell capacitor to the bit line shares its charge with the bit line, destroying the original state (destructive read). The sense amplifier therefore amplifies the tiny voltage difference to determine the data and at the same time writes the amplified value back to the cell.

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More DRAM questions

  1. Which pair of three-dimensional structures has been used in DRAM cells to secure capacitor capacitance?
  2. Which correctly describes a property of DRAM?
  3. What does 'DDR (double data rate)' in DDR SDRAM mean?
  4. In a DRAM cell array, which line connects to the gates of the cell transistors and selects the row to be read or written?
  5. How does the data retention time of DRAM cells generally change as temperature rises?