DDR vs LPDDR vs GDDR vs HBM: DRAM Types Compared
All four are DRAM, but they are tuned for different jobs. DDR is the standard main memory for PCs and servers. LPDDR cuts power for phones and thin laptops. GDDR pushes per-pin speed for graphics cards. HBM stacks dies and uses a very wide bus, giving the highest bandwidth for AI accelerators at the highest cost.
| Aspect | DDR | LPDDR | GDDR | HBM |
|---|---|---|---|---|
| Full name | Double data rate SDRAM | Low-power DDR | Graphics DDR | High bandwidth memory |
| Main target | PCs and servers | Smartphones, tablets, thin laptops | Graphics cards, game consoles | AI accelerators and high-performance computing |
| Data bus | 64 bits per channel on a DIMM (DDR5 splits this into two 32-bit halves) | Narrow channels (16 or 32 bits) | 32 bits per chip, with many chips around the GPU | 1,024 bits per stack (HBM3), very wide |
| Speed per pin | Moderate (DDR5 is about 4,800 to 8,000 MT/s) | Moderate to high (LPDDR5X reaches 8,533 MT/s and beyond) | Very high (GDDR6X over 20 Gb/s, GDDR7 around 30 Gb/s) | Lower per pin, because the bus is so wide |
| Bandwidth | Tens of GB/s per channel | Tens of GB/s per device or package | Tens to a hundred GB/s per chip, several hundred GB/s to over 1 TB/s per card | Hundreds of GB/s per stack, several TB/s per accelerator |
| Power | Moderate | Lowest per bit: low voltage and deep power-down modes | High | Efficient per bit, but stacked dies are hard to cool |
| Packaging | Memory modules (DIMMs) in sockets, or soldered | Soldered, or stacked on the processor package (PoP) | Soldered on the graphics board around the GPU | Stacked dies joined by TSVs, placed next to the processor on a silicon interposer |
| Capacity | Highest: from several GB to hundreds of GB per module | Several GB to tens of GB | A few GB per chip | Tens of GB per stack |
| Upgradable | Yes, on DIMM sockets | No | No | No |
| Cost per bit | Lowest | Higher than DDR | Higher than DDR | Highest, because of stacking and advanced packaging |
Figures are typical orders of magnitude and vary by process generation and product.