What is TLC (triple-level cell)?
A flash format that stores three bits per cell, distinguishing eight threshold-voltage states. It lowers cost per bit but reduces endurance. Four bits per cell is QLC.
Field: SRAM and flash memory
TLC (triple-level cell) in the explanations
TLC and QLC take time to program because states must be placed precisely.
In TLC and QLC SSDs, what is the main purpose of using part…Generally SLC > MLC > TLC > QLC, roughly 100,000 cycles for SLC, several thousand to 10,000 for MLC, a few thousand for TLC and about 1,000 for QLC.
Which orders SLC, MLC and TLC from the most rewrite cycles …For TLC's eight states, the order might be 111→110→100→101→001→000→010→011.
In multi-level (MLC or TLC) NAND flash, why are the bit pat…
Questions that mention TLC (triple-level cell) (9)
- In TLC and QLC SSDs, what is the main purpose of using part of the space as SLC to absorb writes temporarily?
- Which orders SLC, MLC and TLC from the most rewrite cycles to the fewest?
- In multi-level (MLC or TLC) NAND flash, why are the bit patterns assigned to adjacent threshold-voltage states chosen to differ by only one bit?
- In flash memory, what is the scheme that stores 3 bits of information in one memory cell called?
- Which correctly describes 3D NAND flash memory?
- What is the main reason flash memory has a limited number of rewrite cycles?
- How many bits does an SLC (single-level cell) flash memory store per cell?
- Which is closest to the typical endurance (number of rewrite cycles) of SLC NAND flash memory?
- What is the basic unit for reading and writing (programming) in NAND flash memory?
Related terms
SLC (single-level cell) NAND flash memory Gray code ECC (error-correcting code) 3D NAND Wear leveling Word line Garbage collection 6T SRAM cell Charge-trap cell