SRAM and flash memory

What is the main reason flash memory has a limited number of rewrite cycles?

  1. ARepeated rewriting degrades the tunnel oxide that electrons pass through
  2. BThe capacitor's capacitance increases
  3. CThe wiring stretches
Show answer and explanation

Answer: A. Repeated rewriting degrades the tunnel oxide that electrons pass through

In flash memory, electrons pass through the tunnel oxide under a high electric field at every program and erase. Repeating this creates defects in the oxide, making it harder to retain electrons. The number of rewrites is therefore limited, and the limit tends to decrease as more bits are stored per cell.

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More SRAM and flash memory questions

  1. What is the purpose of wear leveling, used in SSDs and similar devices?
  2. What is the unit in which data is erased in NAND flash memory?
  3. Which correctly describes a property of SRAM?
  4. In charge-trap cells, widely used in 3D NAND, which material is commonly used for the layer that stores charge?
  5. Under which condition does the data retention of flash memory tend to degrade?