SRAM and flash memory
Which correctly describes 3D NAND flash memory?
- AMemory cells are stacked vertically in many layers to increase capacity
- BIt operates on three different supply voltages
- CIt stores 3 bits per cell
Show answer and explanation
Answer: A. Memory cells are stacked vertically in many layers to increase capacity
As planar scaling approached its limits, 3D NAND, which stacks memory cells vertically in tens to hundreds of layers, became mainstream. Stacking increases capacity without excessively shrinking cell dimensions. Storing 3 bits per cell is called TLC, which is used in combination with 3D NAND.