SRAM and flash memory

In TLC and QLC SSDs, what is the main purpose of using part of the space as SLC to absorb writes temporarily?

  1. ATo increase capacity
  2. BTo encrypt data
  3. CTo make writes faster
Show answer and explanation

Answer: C. To make writes faster

TLC and QLC write many bits into each cell, so writing takes time. Part of the free space is therefore used in fast SLC mode: data is written there first and later moved to the TLC or QLC area (SLC cache). If a large amount of data is written continuously and the cache overflows, speed drops.

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More SRAM and flash memory questions

  1. What problem tends to occur as the supply voltage of SRAM is lowered?
  2. What is the advantage of an 8T SRAM cell, which adds read-only transistors to a 6T SRAM cell?
  3. In flash memory erase, what happens to a cell's threshold voltage when electrons are removed from the floating gate or similar layer?
  4. Which is closest to the number of layers in recent 3D NAND?
  5. In NAND flash, what is the role of the select transistors placed at both ends of the series-connected memory cells?