SRAM and flash memory

What is the basic unit for reading and writing (programming) in NAND flash memory?

  1. ABlock
  2. BPage
  3. CThe whole chip
Show answer and explanation

Answer: B. Page

In NAND flash, reads and writes are done in pages (several KB to over ten KB), and erases in blocks containing many pages. This difference between write and erase units is why management such as garbage collection is needed.

  • A. The block is the unit of erasure.
  • B. Correct. Reading and writing are done per page.
  • C. Reads and writes are not done on the whole chip at once.
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More SRAM and flash memory questions

  1. Which interface standard, built on PCI Express, is widely used to connect high-speed SSDs to the host?
  2. In SRAM, which correctly describes the "data retention voltage" that sets the lower limit when the supply is lowered during standby to reduce leakage?
  3. In a 6T SRAM cell, which design is needed so that the cell contents are not flipped during a read (to prevent read upset)?
  4. Which is an example of a "write assist" technique to prevent SRAM write failures at low voltage?
  5. In multi-level (MLC or TLC) NAND flash, why are the bit patterns assigned to adjacent threshold-voltage states chosen to differ by only one bit?