What is High-NA EUV?
Next-generation EUV lithography that raises the projection optics' numerical aperture from 0.33 to 0.55 to improve resolution.
Field: Lithography
High-NA EUV in the explanations
Standard EUV scanners have an NA of 0.33; High-NA EUV raises it to 0.55, improving resolution about 1.7× and enabling single-exposure patterning of pitches in the low 20 nm range at the same 13.5 nm wavelength.
Which correctly describes 'High-NA EUV', developed as the n…High-NA EUV combines 4× and 8× reduction in different directions.
What is the typical reduction ratio when today's exposure t…High-NA EUV fields are half this size.
In current scanner exposure tools, what is the typical maxi…
Questions that mention High-NA EUV (3)
- Which correctly describes 'High-NA EUV', developed as the next-generation EUV exposure tool?
- What is the typical reduction ratio when today's exposure tools (scanners) project the mask pattern onto the wafer?
- In current scanner exposure tools, what is the typical maximum area on the wafer that can be exposed in one exposure (one shot)?
Related terms
Numerical aperture (NA) Depth of focus (DOF) Scanner Photomask (reticle) ArF excimer laser Bottom anti-reflective coating (BARC) Chemically amplified resist EUV lithography Immersion lithography Line edge roughness (LER)