What is Line edge roughness (LER)?
Nanometer-scale roughness along the edges of fine resist lines. It causes line-width variation (LWR) and leads to variation in transistor characteristics.
Field: Lithography
Line edge roughness (LER) in the explanations
LER quantifies the roughness of pattern edges (usually as 3σ); expressed as linewidth variation it is called LWR.
Which metric describes nanometer-scale roughness on the sid…These stochastic effects cause missing or bridging features, LER and unopened contacts.
What is the main cause of the stochastic fluctuations that …It does not shrink pitch, however, and variations in trim amount and LER translate directly into dimensional variation, so control is critical.
Which technique gradually thins an exposed resist pattern w…
Questions that mention Line edge roughness (LER) (3)
- Which metric describes nanometer-scale roughness on the sidewalls of fine resist patterns?
- What is the main cause of the stochastic fluctuations that are a problem in EUV lithography?
- Which technique gradually thins an exposed resist pattern with plasma to create lines narrower than the exposure limit?
Related terms
Shot noise EUV lithography Plasma TRIM ArF excimer laser Bottom anti-reflective coating (BARC) Chemically amplified resist Depth of focus (DOF) High-NA EUV Immersion lithography