Epitaxial growth

In GaN and similar materials, what is the technique called that reduces dislocations by growing crystal from mask openings and then laterally over the mask?

  1. AEpitaxial lateral overgrowth (ELO)
  2. BALD
  3. CCMP
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Answer: A. Epitaxial lateral overgrowth (ELO)

In ELO, crystal grown from mask openings spreads laterally over the mask. Dislocations propagating from the substrate are blocked by the mask, so the region over the mask has crystal with few dislocations. It has been used to improve the performance of GaN-based lasers.

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More Epitaxial growth questions

  1. Which method grows crystal on a substrate by precipitating it from a solution such as a molten metal?
  2. Which is closest to the typical growth temperature for silicon epitaxy using trichlorosilane?
  3. When a thin silicon layer is grown epitaxially on a relaxed SiGe layer with a larger lattice constant, what strain develops in the silicon?
  4. Which are the main quality items controlled for epitaxial wafers?
  5. In SiC epitaxial growth, what is the main reason for using substrates tilted a few degrees from the crystal axis (with an off-angle)?