Metrology and analysis

Which correctly describes SIMS (secondary ion mass spectrometry)?

  1. AElements are examined from characteristic X-rays emitted under an electron beam
  2. BFilm thickness is measured from optical reflectance
  3. CThe sample is sputtered with primary ions while the emitted secondary ions are mass-analyzed to determine the depth distribution of impurities
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Answer: C. The sample is sputtered with primary ions while the emitted secondary ions are mass-analyzed to determine the depth distribution of impurities

SIMS irradiates the sample with primary ions to sputter its surface little by little and mass-analyzes the emitted secondary ions. By measuring while sputtering, it determines the depth distribution (profile) of impurity concentration with high sensitivity. It is often used to evaluate ion implantation and diffusion, but it is a destructive analysis because it removes material.

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More Metrology and analysis questions

  1. What is mainly measured by the four-point probe method?
  2. Which correctly describes the sample preparation needed to observe a sample with a transmission electron microscope (TEM)?
  3. Which is a typical principle used in defect inspection tools that detect particles and pattern defects on wafers?
  4. What is mainly measured with an atomic force microscope (AFM)?
  5. What can be determined with EDX (energy-dispersive X-ray spectroscopy), used together with SEM and TEM?