Advanced transistors (FinFET and GAA)

Why have III-V compound semiconductors such as InGaAs been researched as future nMOS channel materials?

  1. ABecause they can be manufactured more cheaply than silicon
  2. BBecause their electron mobility is far higher than silicon's
  3. CBecause their band gap is larger than silicon's, giving less leakage
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Answer: B. Because their electron mobility is far higher than silicon's

III-V compounds such as InGaAs have electron mobilities several times that of silicon or more, promising large currents even at low voltages. However, there are many obstacles to practical use, including growth on silicon substrates, the interface with the gate insulator, low hole mobility and cost.

  • A. Compound semiconductors tend to cost more to manufacture than silicon.
  • B. Correct. The reason is their very high electron mobility.
  • C. InGaAs has a smaller band gap than silicon, which tends to increase leakage.
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More Advanced transistors (FinFET and GAA) questions

  1. Which correctly describes the transistor performance metric "Ion/Ioff ratio"?
  2. How did the subthreshold swing (SS) generally change with the move from planar transistors to FinFETs?
  3. As physical scaling becomes harder, what is the practice of considering design and process technology together to optimize area and performance called?
  4. In nanosheet GAA transistors now in production, how many nanosheets are typically stacked in one transistor?
  5. Which structure places nMOS and pMOS nanosheets close together on either side of a thin insulating wall to reduce cell area?