Advanced transistors (FinFET and GAA)

To adequately suppress short-channel effects in a FinFET, what is generally required of the fin width?

  1. AIt can be chosen independently of the gate length
  2. BMake it much wider than the gate length
  3. CMake it thinner than the gate length
Show answer and explanation

Answer: C. Make it thinner than the gate length

The thinner the fin, the better the field from the gates on both sides reaches its center, making it easier for the gate to control the whole channel. As a guideline, the fin width must be about half the gate length or less, and in leading-edge generations it has shrunk to a few nanometers.

  • A. Fin width strongly affects suppression of short-channel effects.
  • B. Too thick a fin leaves the center uncontrolled by the gate, increasing leakage.
  • C. Correct. A thin fin strengthens gate control.
Practice this topic Back to topic

More Advanced transistors (FinFET and GAA) questions

  1. In high-k/metal gate transistors, why is a very thin layer such as SiO2 often placed between the silicon and the high-k film (such as hafnium oxide)?
  2. Why have III-V compound semiconductors such as InGaAs been researched as future nMOS channel materials?
  3. Which correctly describes the transistor performance metric "Ion/Ioff ratio"?
  4. How did the subthreshold swing (SS) generally change with the move from planar transistors to FinFETs?
  5. As physical scaling becomes harder, what is the practice of considering design and process technology together to optimize area and performance called?