Advanced transistors (FinFET and GAA)

Which technique covers the gate with insulator so that a slightly misaligned contact does not short to the gate?

  1. ALDD
  2. BTSV
  3. CSelf-aligned contact (SAC)
Show answer and explanation

Answer: C. Self-aligned contact (SAC)

If the top and sides of the gate are covered with nitride or similar, contact etching that shifts toward the gate stops at the insulator and does not reach the gate. This self-aligned contact prevents shorts even with tight gate-to-contact spacing, allowing smaller cells.

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More Advanced transistors (FinFET and GAA) questions

  1. Why are SiGe and germanium considered or adopted instead of silicon as pMOS channel materials?
  2. Which 3D integration method builds transistor layers one after another on the wafer, without bonding chips?
  3. Which company and generation first put FinFETs (called Tri-Gate by Intel) into volume-production logic products?
  4. Which company and generation were first to announce volume production of GAA (nanosheet) transistors?
  5. What is the main purpose of scaling transistors down?