Advanced transistors (FinFET and GAA)

Why are SiGe and germanium considered or adopted instead of silicon as pMOS channel materials?

  1. ABecause their hole mobility is high
  2. BBecause their electron mobility is very low
  3. CBecause the materials are cheap
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Answer: A. Because their hole mobility is high

Germanium and SiGe have higher hole mobility than silicon, so they increase pMOS drive current. SiGe-channel pMOS also helps adjust the threshold voltage and has been adopted in leading-edge processes.

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More Advanced transistors (FinFET and GAA) questions

  1. Which 3D integration method builds transistor layers one after another on the wafer, without bonding chips?
  2. Which company and generation first put FinFETs (called Tri-Gate by Intel) into volume-production logic products?
  3. Which company and generation were first to announce volume production of GAA (nanosheet) transistors?
  4. What is the main purpose of scaling transistors down?
  5. What does "nanosheet" refer to in a nanosheet GAA transistor?