Advanced transistors (FinFET and GAA)

Which correctly describes DIBL (drain-induced barrier lowering)?

  1. AThe gate insulator breaks down over time
  2. BMetal atoms in wiring migrate due to current
  3. CThe higher the drain voltage, the lower the potential barrier at the source, lowering the threshold voltage
Show answer and explanation

Answer: C. The higher the drain voltage, the lower the potential barrier at the source, lowering the threshold voltage

With a short gate, the drain's electric field reaches close to the source and lowers the potential barrier between the source and channel. As a result, the higher the drain voltage, the lower the threshold voltage and the higher the off-state leakage. It is one of the representative short-channel effects.

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More Advanced transistors (FinFET and GAA) questions

  1. How is the effective channel width of a FinFET adjusted?
  2. Which correctly describes the CFET (complementary FET), researched as the structure to follow GAA?
  3. In high-k/metal gate transistors, which is one of the main ways to adjust the threshold voltage?
  4. Which correctly describes the gate-last (replacement metal gate) process?
  5. What is an advantage of fully depleted SOI (FD-SOI) transistors?