What is Wet etching?
Etching that dissolves films by immersing them in chemicals. Selectivity is high and damage low, but it generally proceeds isotropically and does not suit fine patterning.
Field: Etching
Wet etching in the explanations
Wet etching dissolves films by chemical reaction in liquid, so it generally proceeds equally in all directions (isotropic) and undercuts the mask by about the film thickness.
Which is a general characteristic of wet etching?Wet etching proceeds by chemical reaction, so higher temperature generally speeds it up—often by 1.5–2× per 10 °C.
In wet etching, how does the etch rate generally change whe…GaN's strong bonds make it chemically stable and nearly immune to wet etching, but chlorine-based plasmas remove it as volatile GaCl3, with BCl3 also helping strip surface oxide.
Which gases are commonly used for dry etching of GaN?
Questions that mention Wet etching (7)
- Which is a general characteristic of wet etching?
- Which solution is commonly used for wet etching of silicon nitride?
- Which is a characteristic of wet etching of silicon with potassium hydroxide (KOH) solution?
- Which solution, made by buffering hydrofluoric acid with ammonium fluoride, is used for wet etching of SiO2?
- In wet etching, how does the etch rate generally change when the solution temperature is raised?
- When a 1 µm film is etched just down to the underlayer by perfectly isotropic wet etching, roughly how much is etched laterally from the mask edge (undercut)?
- Which gases are commonly used for dry etching of GaN?
Related terms
Selectivity Dry etching MEMS LOCOS STI (shallow trench isolation) 3D NAND Buffered hydrofluoric acid (BHF) Isotropic etching Overetch GaN (gallium nitride)