What is Dry etching?

Removing material with plasma or gas instead of liquid chemicals. Combining ion bombardment allows anisotropic etching, which is essential for fine patterns.

Field: Etching

Dry etching in the explanations

Questions that mention Dry etching (12)

  1. Which method is commonly used to detect the endpoint of dry etching?
  2. Which gases are commonly used for dry etching of polysilicon gates?
  3. Which correctly describes one mechanism by which dry etching achieves anisotropy?
  4. Which gases are commonly used for dry etching of GaN?
  5. Why is it difficult to pattern copper wiring directly by dry etching?
  6. Why are reaction products (polymers) left on pattern sidewalls removed after dry etching?
  7. Which correctly describes the "plasma" used in dry etching?
  8. In dry etching, what is the profile defect called in which the bottom of a trench is etched deeper near the sidewalls than in the center, creating narrow grooves?
  9. Exposing silicon to XeF2 gas and an argon ion beam simultaneously etches it far faster than the sum of either alone. What property of dry etching does this show?
  10. Which gases are mainly used for dry etching of silicon oxide (SiO2)?
  11. Which is a general characteristic of wet etching?
  12. What is the main reason the wiring material of advanced LSIs was changed from aluminum (Al) to copper (Cu)?

Related terms

Plasma Selectivity Wet etching GaN (gallium nitride) ICP (inductively coupled plasma) CMP Ashing STI (shallow trench isolation) RIE (reactive ion etching) Electromigration

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