Etching

Which gases are commonly used for dry etching of GaN?

  1. AChlorine-based gases (Cl2, BCl3, etc.)
  2. BOxygen only
  3. CWater vapor
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Answer: A. Chlorine-based gases (Cl2, BCl3, etc.)

GaN is chemically stable and hard to etch, but a chlorine-based plasma removes it as volatile chlorides. High-density plasma tools such as ICP are used to etch mesa structures for LEDs and power devices.

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More Etching questions

  1. Why is it difficult to pattern copper wiring directly by dry etching?
  2. In gate etching, what is the phenomenon called in which the pattern sidewall is undercut laterally near the boundary with the underlying insulator?
  3. Why are reaction products (polymers) left on pattern sidewalls removed after dry etching?
  4. What is needed to etch oxide and stop on the nitride underneath?
  5. What is the role of etching in semiconductor manufacturing?