Silicon wafers

Which correctly describes gettering?

  1. AGrinding the wafer thin
  2. BA technique that captures harmful metal impurities at locations away from the device region
  3. CA technique for bonding several wafers together
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Answer: B. A technique that captures harmful metal impurities at locations away from the device region

Gettering collects and traps metal impurities that degrade device characteristics at defects inside the wafer or on its back, away from the device region at the surface. There is intrinsic gettering, which uses oxygen precipitates inside the wafer, and extrinsic gettering, which introduces damage or strain on the back side.

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  1. Which impurity is incorporated in relatively large amounts from the crucible into silicon crystals grown by the CZ method?
  2. What is the most appropriate order of steps for making wafers from a single-crystal ingot?
  3. Which correctly describes a typical method of manufacturing SOI wafers?
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