Metrology and analysis

Which method is used to measure interstitial oxygen concentration in silicon?

  1. AFour-point probe method
  2. BEDX
  3. CInfrared absorption (FTIR)
Show answer and explanation

Answer: C. Infrared absorption (FTIR)

Interstitial oxygen in silicon absorbs infrared light at a specific wavenumber. Measuring the strength of that absorption by FTIR gives the oxygen concentration nondestructively. It is widely used to control the oxygen concentration of CZ wafers and also to measure carbon and other concentrations.

Practice this topic Back to topic

More Metrology and analysis questions

  1. Which method measures wafer carrier lifetime without contact to evaluate metal contamination and the like?
  2. Which function captures SEM images of defects found in inspection and automatically classifies their types from the images?
  3. Which correctly describes the general difference between "metrology" and "inspection" on a semiconductor production line?
  4. What is the main purpose of performing metrology and inspection partway through the process on a production line?
  5. In production-line metrology, why are only selected wafers or points often measured rather than all of them?