Silicon wafers

In the CZ method, what is the main purpose of controlling the ratio of pull rate to temperature gradient in the crystal (V/G)?

  1. ATo control the type and amount of point defects (vacancies and interstitial silicon) incorporated, reducing crystal defects
  2. BTo change the color of the crystal
  3. CTo extend the life of the crucible
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Answer: A. To control the type and amount of point defects (vacancies and interstitial silicon) incorporated, reducing crystal defects

The ratio of pull rate V to temperature gradient G determines whether the excess point defects incorporated into the crystal are vacancies or interstitial silicon. Controlling V/G properly yields high-quality crystals with few microdefects (such as COPs) formed when these point defects cluster.

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More Silicon wafers questions

  1. Which is the typical method for producing high-purity polycrystalline silicon?
  2. What is a wafer called that is run through a process separately from products to check equipment condition or measure film thickness?
  3. What is the main reason silicon wafers must be very flat?
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