Metrology and analysis

Whereas SIMS measures the atomic concentration of impurities, which method measures the depth distribution of electrically active carrier concentration?

  1. AEDX
  2. BAtomic force microscopy (AFM)
  3. CElectrical measurements such as spreading resistance profiling (SRP)
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Answer: C. Electrical measurements such as spreading resistance profiling (SRP)

Spreading resistance profiling polishes the sample at an angle to stretch out the depth direction, then measures resistance with probes along it to obtain the depth distribution of carrier concentration. SIMS measures atomic concentration including inactive impurities, so comparing the two reveals how well the impurities have been activated.

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