Advanced transistors (FinFET and GAA)

Which company and generation first put FinFETs (called Tri-Gate by Intel) into volume-production logic products?

  1. AIntel's 22 nm generation (around 2011–2012)
  2. BTSMC's 90 nm generation (around 2004)
  3. CSamsung's 2 nm generation (around 2025)
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Answer: A. Intel's 22 nm generation (around 2011–2012)

Intel adopted FinFETs (which it called Tri-Gate) for volume production at the 22 nm generation, shipping products from around 2012. TSMC and Samsung later adopted FinFETs at the 16/14 nm generation, completing the move away from planar transistors.

  • A. Correct. Intel was first to adopt them in volume at 22 nm.
  • B. The 90 nm generation was the era of planar transistors.
  • C. At the 2 nm generation, the industry is moving to GAA.
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More Advanced transistors (FinFET and GAA) questions

  1. Which company and generation were first to announce volume production of GAA (nanosheet) transistors?
  2. What is the main purpose of scaling transistors down?
  3. What does "nanosheet" refer to in a nanosheet GAA transistor?
  4. What does the "k" in "high-k gate dielectric" represent?
  5. For a FinFET whose fin is 50 nm tall and 6 nm wide, which is closest to the effective channel width per fin (the perimeter wrapped by the gate)?