Epitaxial growth

Why are epitaxial layers important in the fabrication of SiC power devices?

  1. ATo form the voltage-blocking drift layer precisely, with low doping and the required thickness
  2. BTo make the wafer transparent
  3. CTo reduce wiring resistance
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Answer: A. To form the voltage-blocking drift layer precisely, with low doping and the required thickness

In SiC, dopants hardly diffuse thermally, so the device's main layers are formed by epitaxial growth. The doping and thickness of the drift layer, which determine breakdown voltage, must be controlled precisely, and reducing crystal defects in the epitaxial layer is also important for yield and reliability.

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More Epitaxial growth questions

  1. In epitaxial growth by CVD, the growth rate depends strongly on temperature in the relatively low-temperature regime. Why?
  2. Which is a typical crystal defect in epitaxial layers in which the stacking sequence of atomic planes is disrupted?
  3. In GaN and similar materials, what is the technique called that reduces dislocations by growing crystal from mask openings and then laterally over the mask?
  4. Which method grows crystal on a substrate by precipitating it from a solution such as a molten metal?
  5. Which is closest to the typical growth temperature for silicon epitaxy using trichlorosilane?