Epitaxial growth

Which is a typical crystal defect in epitaxial layers in which the stacking sequence of atomic planes is disrupted?

  1. AVoid
  2. BHillock
  3. CStacking fault
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Answer: C. Stacking fault

A stacking fault is a defect in which the order in which atomic planes stack is locally disrupted. In epitaxial growth it can originate from contamination or scratches on the substrate surface. Because it causes leakage current and other problems, surface preparation before growth is important.

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More Epitaxial growth questions

  1. In GaN and similar materials, what is the technique called that reduces dislocations by growing crystal from mask openings and then laterally over the mask?
  2. Which method grows crystal on a substrate by precipitating it from a solution such as a molten metal?
  3. Which is closest to the typical growth temperature for silicon epitaxy using trichlorosilane?
  4. When a thin silicon layer is grown epitaxially on a relaxed SiGe layer with a larger lattice constant, what strain develops in the silicon?
  5. Which are the main quality items controlled for epitaxial wafers?