Epitaxial growth

Which is closest to the typical growth temperature for silicon epitaxy using trichlorosilane?

  1. AAbout 100 °C
  2. BAbout 1100 °C
  3. CAbout 2000 °C
Show answer and explanation

Answer: B. About 1100 °C

Silicon epitaxy with trichlorosilane is typically done at high temperatures around 1100 °C. Dichlorosilane or silane allow growth at lower temperatures. 2000 °C exceeds silicon's melting point (about 1414 °C).

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More Epitaxial growth questions

  1. When a thin silicon layer is grown epitaxially on a relaxed SiGe layer with a larger lattice constant, what strain develops in the silicon?
  2. Which are the main quality items controlled for epitaxial wafers?
  3. In SiC epitaxial growth, what is the main reason for using substrates tilted a few degrees from the crystal axis (with an off-angle)?
  4. Which is an advantage of performing silicon epitaxial growth at reduced pressure?
  5. Which method measures the thickness of a lightly doped epitaxial layer on a heavily doped substrate using infrared interference?