Deposition (CVD and PVD)

Which is an example of a typical material deposited by ALD?

  1. AThick copper wiring
  2. BPhotoresist
  3. CHafnium oxide for high-k films, titanium nitride and the like
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Answer: C. Hafnium oxide for high-k films, titanium nitride and the like

ALD controls thickness atomic layer by atomic layer and has excellent step coverage, so it is used where thin, uniform films are needed, such as hafnium oxide high-k gate dielectrics, titanium nitride for metal gates and barrier layers, and dielectric films for DRAM capacitors.

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More Deposition (CVD and PVD) questions

  1. What is the main purpose of a sputtering method that ionizes sputtered atoms and draws them vertically onto the wafer with a bias?
  2. In deposition and etching equipment, which mechanism holds the wafer on the stage by electrostatic force?
  3. Which pair of source gases is used to deposit silicon nitride (Si3N4) by thermal CVD?
  4. What is the method called that sputters a titanium target in a nitrogen-containing gas to form titanium nitride (TiN) films?
  5. What is an advantage of plasma-enhanced ALD (PEALD)?