Deposition (CVD and PVD)

What is the main purpose of a sputtering method that ionizes sputtered atoms and draws them vertically onto the wafer with a bias?

  1. ATo improve film coverage at the bottom of deep holes and trenches (bottom coverage)
  2. BTo slow down deposition
  3. CTo change the color of the film
Show answer and explanation

Answer: A. To improve film coverage at the bottom of deep holes and trenches (bottom coverage)

In ordinary sputtering, atoms arrive from many directions, so little film reaches the bottom of deep holes. Ionizing sputtered atoms in the plasma and drawing them in vertically with a wafer bias makes it easier to deposit film at the bottom. It is used to form barrier and seed layers.

Practice this topic Back to topic

More Deposition (CVD and PVD) questions

  1. In deposition and etching equipment, which mechanism holds the wafer on the stage by electrostatic force?
  2. Which pair of source gases is used to deposit silicon nitride (Si3N4) by thermal CVD?
  3. What is the method called that sputters a titanium target in a nitrogen-containing gas to form titanium nitride (TiN) films?
  4. What is an advantage of plasma-enhanced ALD (PEALD)?
  5. In CVD equipment, which component supplies source gas uniformly over the wafer through many small holes?